MMBR521LT1 Datasheet (Motorola) - HIGH-FREQUENCY TRANSISTOR PNP SILICON

MMBR521LT1, HIGH-FREQUENCY TRANSISTOR PNP SILICON

MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MMBR521LT1/D The RF Line PNP Silicon High-Frequency Transistor Designed primarily for use in the high gain, low noise small signal amplifiers for operation up to 3.5 GHz.

Also usable in applications requiring fast switching times.

High Current Gain Bandwidth Product fT = 3.4 GHz (Typ) @ IC = 35 mAdc (MMBR521LT1) fT = 4.2 GHz (Typ) @ IC = 50 mAdc (MRF5211LT1)

MMBR521LT1 Features

* 68 73 73 73 72 69 65 60 54 47 39 31 22 62 41 40 44 49 53 64 69 68 63 56 47 38 28 58 48 53 58 61 63 66 66 64 59 52 44 36 28 |S22| 0.818 0.549 0.472 0.452 0.449 0.451 0.480 0.466 0.483 0.493 0.500 0.502 0.503 0.507 0.694 0.417 0.358 0.346 0.347 0.352 0.382 0.371 0.391 0.408 0.421 0.431 0.442 0.455 0.4