MMBR911LT1 Datasheet (Advanced Power Technology) - NPN SILICON HIGH-FREQUENCY TRANSISTOR

MMBR911LT1, NPN SILICON HIGH-FREQUENCY TRANSISTOR

Designed for low noise, wide dynamic range front *end amplifiers and low *noise VCO’s.

Available in a surface *mountable plastic package.

This small *signal plastic transistor offers superior quality and performance at low cost.

MMBR911LT1 MMBR911LT1G * G Denotes Ro

MMBR911LT1 Features

* High Gain

* Bandwidth Product fT = 7.0 GHz (Typ) @ 30 mA

* Low Noise Figure NF = 1.7 dB (Typ) @ 500 MHz

* High Gain GNF = 17 dB (Typ) @ 10 mA/500 MHz

* State

* of

* the

* Art Technology Fine Line Geometry Ion

* Implanted Arsenic Emitte