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1N23WE SILICON MIXER DIODE

1N23WE Description

1N23WE SILICON MIXER DIODE .
The ASI 1N23WE is a Silicon Mixer Diode Designed for Applications Operating From 8. High bur.

1N23WE Features

* High burnout resistance
* Low noise figure
* Hermetically sealed package MAXIMUM RATINGS IF VR PDISS TJ TSTG O O 20 mA 1.0 V 5.0 (ERGS) @ TC = 25 C -55 C to +150 C -55 C to +150 C O O O NONE CHARACTERISTICS SYMBOL NF VSWR ZIF frange RL = 22 Ω TC = 25 C O TEST CONDIT

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Datasheet Details

Part number
1N23WE
Manufacturer
Advanced Semiconductor
File Size
15.63 KB
Datasheet
1N23WE_AdvancedSemiconductor.pdf
Description
SILICON MIXER DIODE

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📌 All Tags

SILICON MIXER DIODE Advanced Semiconductor
Advanced Semiconductor 1N23WE-like datasheet