1N23WE SILICON MIXER DIODE

Advanced Semiconductor

Description

1N23WE SILICON MIXER DIODE .
The ASI 1N23WE is a Silicon Mixer Diode Designed for Applications Operating From 8. High bur.

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Datasheet Specifications

Part number: 1N23WE
Manufacturer: Advanced Semiconductor
File Size: 15.63 KB
Datasheet: 1N23WE_AdvancedSemiconductor.pdf
Description: SILICON MIXER DIODE

Features

* High burnout resistance
* Low noise figure
* Hermetically sealed package MAXIMUM RATINGS IF VR PDISS TJ TSTG O O 20 mA 1.0 V 5.0 (ERGS) @ TC = 25 C -55 C to +150 C -55 C to +150 C O O O NONE CHARACTERISTICS SYMBOL NF VSWR ZIF frange RL = 22 Ω TC = 25 C O TEST CONDIT

1N23WE Distributors

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📌 All Tags

1N23WE SILICON MIXER DIODE Advanced Semiconductor

Advanced Semiconductor 1N23WE-like datasheet

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