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1N23WE

SILICON MIXER DIODE

1N23WE Features

* High burnout resistance

* Low noise figure

* Hermetically sealed package MAXIMUM RATINGS IF VR PDISS TJ TSTG O O 20 mA 1.0 V 5.0 (ERGS) @ TC = 25 C -55 C to +150 C -55 C to +150 C O O O NONE CHARACTERISTICS SYMBOL NF VSWR ZIF frange RL = 22 Ω TC = 25 C O TEST CONDIT

1N23WE Datasheet (15.63 KB)

Preview of 1N23WE PDF

Datasheet Details

Part number:

1N23WE

Manufacturer:

Advanced Semiconductor

File Size:

15.63 KB

Description:

Silicon mixer diode.

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TAGS

1N23WE SILICON MIXER DIODE Advanced Semiconductor

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