1N23WE Datasheet, Diode, Advanced Semiconductor

1N23WE Features

• Diode
• High burnout resistance
• Low noise figure
• Hermetically sealed package MAXIMUM RATINGS IF VR PDISS TJ TSTG O O 20 mA 1.0 V 5.0 (ERGS) @ TC = 25 C -55 C to

PDF File Details

Part number:

1N23WE

Manufacturer:

Advanced Semiconductor

File Size:

15.63kb

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📄 Datasheet

Description:

Silicon mixer diode. The ASI 1N23WE is a Silicon Mixer Diode Designed for Applications Operating From 8.0 to 12.4 GHz. PACKAGE STYLE DO- 23 FEATURES: <

1N23WE Application

• Applications Operating From 8.0 to 12.4 GHz. PACKAGE STYLE DO- 23 FEATURES:
• High burnout resistance
• Low noise figure

TAGS

1N23WE

Advanced Semiconductor

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