1N2927 Datasheet - Advanced Semiconductor

1N2927 GERMANIUM TUNNEL DIODE

The 1N2927 is Designed for Switching Applications in Industrial and Miitary Applications. MAXIMUM RATINGS IF TJ TSTG TSOLD O O 500 µA -65 C to +150 C -65 C to +200 C 10 S/250 C O O O NONE CHARACTERISTICS SYMBOL IP IV VP VV VF IR TC = 25 C O TEST CONDITIONS MINIMUM 90 TYPICAL MAXIMUM 110 3.

1N2927_AdvancedSemiconductor.pdf

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Datasheet Details

Part number:

1N2927

Manufacturer:

Advanced Semiconductor

File Size:

22.84 KB

Description:

Germanium tunnel diode.

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1N2927 1N2927 GERMANIUM TUNNEL DIODE Advanced Semiconductor