1N2384
Motorola
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High-voltage silicon rectifier.
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1N2382 - high-voltage silicon rectifier
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HIGH VOLTAGE SILICON RECTIFIERS MOLDED ASSEMBLIES
lN1730 thru lN1734 lN2382 thru lN2385
CASE 41
Standard single - phase, half-wave, high -voltage si.
1N2383 - high-voltage silicon rectifier
(Motorola)
HIGH VOLTAGE SILICON RECTIFIERS MOLDED ASSEMBLIES
lN1730 thru lN1734 lN2382 thru lN2385
CASE 41
Standard single - phase, half-wave, high -voltage si.
1N2385 - high-voltage silicon rectifier
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HIGH VOLTAGE SILICON RECTIFIERS MOLDED ASSEMBLIES
lN1730 thru lN1734 lN2382 thru lN2385
CASE 41
Standard single - phase, half-wave, high -voltage si.
1N23A - SILICON MIXER DIODE
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SILICON MIXER DIODE
1N23A
PACKAGE STYLE DO- 22
DESCRIPTION:
The ASI 1N23A is a Silicon Mixer
Diode Designed for Applications Operating From 8.0 to .
1N23E - DIODE
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Technical Data DIODE
maximum ratings
Voltage, Reverse (VR) Voltage, Reverse Peak (VRM) Current at VR = OV (IO) Current Average Rectified (IF) Curren.
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1N23WE
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DESCRIPTION:
The ASI 1N23WE is a Silicon Mixer Diode Designed for Applications Operating From 8.0 to 12.4 GHz.
PACKAGE ST.
1N23WE - DIODE
(DSI)
Technical Data DIODE
maximum ratings
Voltage, Reverse (VR) Voltage, Reverse Peak (VRM) Current at VR = OV (IO) Current Average Rectified (IF) Curren.
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1N23WG
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DESCRIPTION:
The ASI 1N23WG is a Silicon Mixer Diode Designed for Applications Operating From 8.0 to 12.4 GHz.
PACKAGE ST.
1N200 - (1N200 - 1N222) General Purpose Diodes
(International Semiconductor)
..
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ee DataSh
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DataSheet 4 U .
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1N2008 - Zener Diode
(Solid State)
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