Click to expand full text
1N4387
SILICON MULTIPLIER VARACTOR DIODE
PACKAGE STYLE DO- 4 DESCRIPTION:
The 1N4387 is a High Power Silicon Multiplier Varactor Diode.
MAXIMUM RATINGS
IO VR PDISS TJ TSTG θJC
O O
200 mA 150 V 20 W @ TC = 25 C -65 C to +150 C -65 C to +175 C 5.0 C/W
O O O O
1 = Anode 2 = Cathode
NONE
CHARACTERISTICS
SYMBOL
VBR CT Q fin POUT(x3) PIN = 30 W IR = 10 µA VR = 6.0 V VR = 6.0 V
TC = 25 C
O
TEST CONDITIONS
f = 1.0 MHz f = 50 MHz FIN = 150 MHz
MINIMUM
150
TYPICAL
MAXIMUM
35
UNITS
V pF --MHz W
200 150 15 30
A D V A N C E D S E M I C O N D U C T O R, I N C.
7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1202 • FAX (818) 765-3004
Specifications are subject to change without notice.
REV.
1N4387 Datasheet
