2N6166 NPN SILICON RF POWER TRANSISTOR

Advanced Semiconductor

Description

2N6166 NPN SILICON RF POWER TRANSISTOR .
The ASI 2N6166 is Designed to operate in a collector modulated VHF Power Amplifier Applications up to 200 MHz.

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Datasheet Specifications

Part number: 2N6166
Manufacturer: Advanced Semiconductor
File Size: 15.24 KB
Datasheet: 2N6166_AdvancedSemiconductor.pdf
Description: NPN SILICON RF POWER TRANSISTOR

Features

* ηC = 60 % min. @ 100 W/150 MHz
* PG = 6.0 dB min. @ 100 W/150 MHz
* Omnigold™ Metalization System C B B E H D G F E I J K MAXIMUM RATINGS IC VCBO VEBO PDISS TJ TSTG θJC 9.0 A 65 V 4.0 V 117 W @ TC = 25 °C -65 °C to +200 °C -65 °C to +150 °C 1.5 °C/W DIM A B C D E F

2N6166 Distributors

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2N6166 NPN SILICON POWER TRANSISTOR Advanced Semiconductor

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