Part number:
2SC1971
Manufacturer:
Advanced Semiconductor
File Size:
80.91 KB
Description:
Npn silicon rf power transistor.
* INCLUDE:
* Replaces Original 2SC1971 in Most Applications High Gain Reduces Drive Requirements Economical TO-220CE Package PACKAGE STYLE TO-220AB (COMMON EMITTER) MAXIMUM RATINGS IC VCBO PDISS TSTG θJC 2.0 A 35 V 12.5 W @ TC = 25 °C -55 °C to +150 °C 10 °C/W 1 = BASE 2
2SC1971
Advanced Semiconductor
80.91 KB
Npn silicon rf power transistor.
📁 Related Datasheet
2SC1970 - Silicon NPN Power Transistor
(Inchange Semiconductor)
isc Silicon NPN Power Transistor
INCHANGE Semiconductor
2SC1970
DESCRIPTION ·High Power Gain-
: Gpe≥ 9.2dB,f= 175MHz, PO= 1W; VCC= 13.5V ·High Relia.
2SC1971 - NPN Transistor
(Mitsubishi Electric Semiconductor)
.
2SC1971 - Silicon NPN Power Transistor
(Inchange Semiconductor)
..
INCHANGE Semiconductor
isc Product Specification
isc Silicon NPN Power Transistor
2SC1971
DESCRIPTION ·High Power Gain: Gpe≥ .
2SC1972 - NPN Transistor
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2SC1972 - NPN SILICON RF POWER TRANSISTOR
(ASI)
2SC1972
NPN SILICON RF POWER TRANSISTOR
DESCRIPTION:
The ASI 2SC1972 is Designed for RF power amplifiers on VHF band mobile radio applications.
FEAT.
2SC1972 - Silicon NPN POWER TRANSISTOR
(HGSemi)
HG
HG RF POWER TRANSISTOR
Semiconductors
ROHS Compliance,Silicon NPN POWER TRANSISTOR
2SC1972
Note : Above parameters , ratings , limits and cond.
2SC1972 - silicon NPN epitaxial planar type transistor
(Eleflow)
2SC1972
Description
The Eleflow 2SC1972 is a silicon NPN epitaxial planar type transistor designed for RF power amplifiers within the VHF band, ideal .
2SC1973 - NPN Transistor
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.