ASI2307 Datasheet, Transistor, Advanced Semiconductor

ASI2307 Features

• Transistor
• PG = 9.5 dB min. at 7 W / 2300 MHz
• Hermetic Microstrip Package
• Omnigold™ Metalization System DIM A L G H J F I K M NP MINIMUM inches / mm MAXIMUM inc

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Part number:

ASI2307

Manufacturer:

Advanced Semiconductor

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18.28kb

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📄 Datasheet

Description:

Npn silicon rf power transistor. The ASI 2307 is Designed for General Purpose Class C Power Amplifier Applications up to 3000 MHz. B PACKAGE STYLE .250 2L FLG A ØD

ASI2307 Application

• Applications up to 3000 MHz. B PACKAGE STYLE .250 2L FLG A ØD C E .060 x 45° CHAMFER FEATURES:
• PG = 9.5 dB min. at 7 W / 2300 MHz
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TAGS

ASI2307

Advanced Semiconductor

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