MSC80917 NPN SILICON RF MICROWAVE TRANSISTOR

Advanced Semiconductor

Description

MSC80917 NPN SILICON RF MICROWAVE TRANSISTOR .
The ASI MSC80917 is low level Class-C, Common Base Device Designed for IFF, DME driver Applications.

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Datasheet Specifications

Part number: MSC80917
Manufacturer: Advanced Semiconductor
File Size: 107.35 KB
Datasheet: MSC80917_AdvancedSemiconductor.pdf
Description: NPN SILICON RF MICROWAVE TRANSISTOR

Features

* INCLUDE:
* Omnigold™ Metalization System
* POUT 4.0 W Min.
* GP = 10 dB MAXIMUM RATINGS IC www. DataSheet4U. com 1.0 A 37 V 7.5 W @ TC = 25 °C -65 °C to +200 °C -65 °C to +150 °C 35 °C/W 1 = COLLECTOR 2 = BASE 3 = EMITTER VCE PDISS TJ TSTG θJC CHARACTERISTICS SYMBOL BVCBO

MSC80917 Distributors

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MSC80917 NPN SILICON MICROWAVE TRANSISTOR Advanced Semiconductor

Advanced Semiconductor MSC80917-like datasheet