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vhb2512f

NPN SILICON RF POWER TRANSISTOR

vhb2512f Features

* Common Emitter

* PG = 10 dB at 25 W/175 MHz

* Omnigold™ Metalization System E B C D F E C E MAXIMUM RATINGS IC VCBO VCEO VEBO PDISS TJ TSTG θJC 4.0 A 36 V 18 V 4.0 V 65 W @ TC = 25 °C -65 °C to +200 °C -65 °C to +150 °C 3.5 °C/W DIM A B C D E F G H I J I GH MINIMUM in

vhb2512f Datasheet (14.64 KB)

Preview of vhb2512f PDF

Datasheet Details

Part number:

vhb2512f

Manufacturer:

Advanced Semiconductor

File Size:

14.64 KB

Description:

Npn silicon rf power transistor.

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TAGS

vhb2512f NPN SILICON POWER TRANSISTOR Advanced Semiconductor

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