VHB1-12T Datasheet - Advanced Semiconductor

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VHB1-12T NPN SILICON RF POWER TRANSISTOR

VHB1-12T NPN SILICON RF POWER TRANSISTOR .
The ASI VHB1-12T is Designed for PACKAGE STYLE TO-39 B ØA 45° C FEATURES:. Omnigold™ Metalization System ØD E MAXIMU.

VHB1-12T_AdvancedSemiconductor.pdf

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Datasheet Details

Part number:

VHB1-12T

Manufacturer:

Advanced Semiconductor

File Size:

16.90 KB

Description:

NPN SILICON RF POWER TRANSISTOR

Features

* Omnigold™ Metalization System ØD E MAXIMUM RATINGS IC VCBO VCEO VCER VEBO PDISS TJ TSTG θ JC O F 400 mA (MAX) 40 V 20 V 40 V 2.0 V 3.5 W @ TC = 25 OC -65 C to +200 C -65 OC to +200 OC 20 OC/W O DIM A B C D E F G H G H MINIMUM inches / mm MAXIMUM inches / mm .2

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VHB1-12T NPN SILICON POWER TRANSISTOR Advanced Semiconductor

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