VHB1-12T Datasheet, Transistor, Advanced Semiconductor

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VHB1-12T

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Advanced Semiconductor

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📄 Datasheet

Description:

Npn silicon rf power transistor. The ASI VHB1-12T is Designed for PACKAGE STYLE TO-39 B ØA 45° C FEATURES: * * * Omnigold™ Metalization System ØD E MAXIMUM RATIN

✔ VHB1-12T Features

Omnigold™ Metalization System ØD E MAXIMUM RATINGS IC VCBO VCEO VCER VEBO PDISS TJ TSTG θ JC O F 400 mA (MAX) 40 V 20 V 40 V 2.0 V 3.5 W @ TC = 25 OC -65 C to

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VHB1-12T NPN SILICON POWER TRANSISTOR Advanced Semiconductor