VHB10-12F Datasheet, Transistor, Advanced Semiconductor

VHB10-12F Features

• Transistor
• Omnigold™ Metalization System MAXIMUM RATINGS IC VCBO VCEO VCES VEBO PDISS TJ TSTG θ JC O C D F E H I 2.0 A 36 V 18 V 36 V 4.0 V 20 W @ TC = 25 OC -65

PDF File Details

Part number:

VHB10-12F

Manufacturer:

Advanced Semiconductor

File Size:

17.79kb

Download:

📄 Datasheet

Description:

Npn silicon rf power transistor. The ASI VHB10-12F is Designed for PACKAGE STYLE .380 4L FLG B .112 x 45° A Ø.125 NOM. FULL R J .125 FEATURES:

TAGS

VHB10-12F

Advanced Semiconductor

📁 Related Datasheet

VHB10-12S - NPN SILICON RF POWER TRANSISTOR (Advanced Semiconductor)
VHB10-12S NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI VHB10-12S is Designed for PACKAGE STYLE .380 4L STUD .112x45° A FEATURES: • • • Omni.

VHB10-28F - NPN SILICON RF POWER TRANSISTOR (Advanced Semiconductor)
VHB10-28F NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI VHB10-28F is Designed for PACKAGE STYLE .380 4L FLG .112 x 45° A Ø.125 NOM. FULL R J .

VHB10-28S - NPN SILICON RF POWER TRANSISTOR (Advanced Semiconductor)
VHB10-28S NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI VHB10-28S is an NPN power transistor designed for 138-175 MHz VHF munications. It .

VHB100-12 - NPN SILICON RF POWER TRANSISTOR (Advanced Semiconductor)
VHB100-12 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI VHB100-12 is Designed for PACKAGE STYLE .500 6L FLG C A 2x ØN FULL R D FEATURES: • •.

VHB100W - DC-DC CONVERTER (CUI)
For more information, please visit the product page. SERIES: VHB100W │ DESCRIPTION: DC-DC CONVERTER FEATURES • up to 100 W isolated output • industry .

VHB1-12T - NPN SILICON RF POWER TRANSISTOR (Advanced Semiconductor)
VHB1-12T NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI VHB1-12T is Designed for PACKAGE STYLE TO-39 B ØA 45° C FEATURES: • • • Omnigold™ Met.

VHB1-28T - NPN SILICON RF POWER TRANSISTOR (Advanced Semiconductor)
VHB1-28T NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI VHB1-28T is Designed for PACKAGE STYLE TO-39 B ØA 45° C FEATURES: • • • Omnigold™ Met.

VHB125-28 - NPN SILICON RF POWER TRANSISTOR (Advanced Semiconductor)
VHB125-28 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI VHB125-28 is Designed for PACKAGE STYLE .500 6L FLG C A 2x ØN FULL R D FEATURES: • •.

VHB25-12F - NPN SILICON RF POWER TRANSISTOR (Advanced Semiconductor)
VHB25-12F NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI VHB25-12F is Designed for PACKAGE STYLE .380 4L FLG B .112 x 45° A Ø.125 NOM. FULL R .

VHB25-12F - NPN SILICON RF POWER TRANSISTOR (Advanced Semiconductor)
VHB25-12F NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI VHB25-12F is Designed for PACKAGE STYLE .380 4L FLG B .112 x 45° A Ø.125 NOM. FULL R .