VHB10-12F - NPN SILICON RF POWER TRANSISTOR
VHB10-12F Features
* Omnigold™ Metalization System MAXIMUM RATINGS IC VCBO VCEO VCES VEBO PDISS TJ TSTG θ JC O C D F E H I 2.0 A 36 V 18 V 36 V 4.0 V 20 W @ TC = 25 OC -65 C to +200 C -65 C to +150 C 8.8 OC/W O O O DIM A B C D E F G H I J G MINIMUM inches / mm MAXIMUM inches / mm .2
