VHB10-28S - NPN SILICON RF POWER TRANSISTOR
VHB10-28S Features
* Common Emitter, 28 V operation
* PG = 10 dB at 10W/175 MHz
* Omnigold™ Metalization System
* High VSWR capability MAXIMUM RATINGS IC 1.0 A VCBO 65 V VCEO 35 V VEBO 4.0 V PDISS TJ 13.0 W -65 °OC to +200 °C TSTG -65 °C to +150 °C θJC 13.5 °C/W PACKAGE
