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VHB10-28S

NPN SILICON RF POWER TRANSISTOR

VHB10-28S Features

* Common Emitter, 28 V operation

* PG = 10 dB at 10W/175 MHz

* Omnigold™ Metalization System

* High VSWR capability MAXIMUM RATINGS IC 1.0 A VCBO 65 V VCEO 35 V VEBO 4.0 V PDISS TJ 13.0 W -65 °OC to +200 °C TSTG -65 °C to +150 °C θJC 13.5 °C/W PACKAGE

VHB10-28S Datasheet (14.10 KB)

Preview of VHB10-28S PDF

Datasheet Details

Part number:

VHB10-28S

Manufacturer:

Advanced Semiconductor

File Size:

14.10 KB

Description:

Npn silicon rf power transistor.

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TAGS

VHB10-28S NPN SILICON POWER TRANSISTOR Advanced Semiconductor

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