Part number:
VHB10-28S
Manufacturer:
Advanced Semiconductor
File Size:
14.10 KB
Description:
Npn silicon rf power transistor.
VHB10-28S_AdvancedSemiconductor.pdf
Datasheet Details
VHB10-28S Features
* Common Emitter, 28 V operation
* PG = 10 dB at 10W/175 MHz
* Omnigold™ Metalization System
* High VSWR capability MAXIMUM RATINGS IC 1.0 A VCBO 65 V VCEO 35 V VEBO 4.0 V PDISS TJ 13.0 W -65 °OC to +200 °C TSTG -65 °C to +150 °C θJC 13.5 °C/W PACKAGE
VHB10-28S_AdvancedSemiconductor.pdf
Datasheet Details
VHB10-28S
Advanced Semiconductor
14.10 KB
Npn silicon rf power transistor.
VHB10-28S Distributor
📁 Related Datasheet
VHB10-28F NPN SILICON RF POWER TRANSISTOR (Advanced Semiconductor)
VHB10-12F NPN SILICON RF POWER TRANSISTOR (Advanced Semiconductor)
VHB10-12S NPN SILICON RF POWER TRANSISTOR (Advanced Semiconductor)
VHB100-12 NPN SILICON RF POWER TRANSISTOR (Advanced Semiconductor)
VHB100W DC-DC CONVERTER (CUI)
VHB1-12T NPN SILICON RF POWER TRANSISTOR (Advanced Semiconductor)
VHB1-28T NPN SILICON RF POWER TRANSISTOR (Advanced Semiconductor)
VHB125-28 NPN SILICON RF POWER TRANSISTOR (Advanced Semiconductor)