VHB1-28T - NPN SILICON RF POWER TRANSISTOR
VHB1-28T Features
* Omnigold™ Metalization System ØD E F MAXIMUM RATINGS IC VCBO VCEO VEBO PDISS TJ TSTG θ JC O G H 0.4 A 55 V 30 V 3.5 V 5 W @ TC = 25 C -65 C to +200 C -65 OC to +200 OC 35 OC/W O O DIM A B C D E F G H .016 / 0.407 .029 / 0.740 .028 / 0.720 .335 / 8.510 .305 / 7.750
