VHB1-28T NPN SILICON RF POWER TRANSISTOR

Advanced Semiconductor

Description

VHB1-28T NPN SILICON RF POWER TRANSISTOR .
The ASI VHB1-28T is Designed for PACKAGE STYLE TO-39 B ØA 45° C FEATURES:. Omnigold™ Metalization System ØD E F MAXI.

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Datasheet Specifications

Part number: VHB1-28T
Manufacturer: Advanced Semiconductor
File Size: 17.61 KB
Datasheet: VHB1-28T_AdvancedSemiconductor.pdf
Description: NPN SILICON RF POWER TRANSISTOR

Features

* Omnigold™ Metalization System ØD E F MAXIMUM RATINGS IC VCBO VCEO VEBO PDISS TJ TSTG θ JC O G H 0.4 A 55 V 30 V 3.5 V 5 W @ TC = 25 C -65 C to +200 C -65 OC to +200 OC 35 OC/W O O DIM A B C D E F G H .016 / 0.407 .029 / 0.740 .028 / 0.720 .335 / 8.510 .305 / 7.750

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VHB1-28T NPN SILICON POWER TRANSISTOR Advanced Semiconductor

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