VHB100-12 - NPN SILICON RF POWER TRANSISTOR
VHB100-12 Features
* Omnigold™ Metalization System B G .725/18,42 F E MAXIMUM RATINGS IC VCBO VCEO VCES VEBO PDISS TJ TSTG θ JC O K H DIM MINIMUM inches / mm M L 20 A 36 V 18 V 36 V 4.0 V 270 W @ TC = 25 C -65 C to +200 C -65 C to +150 C 0.65 OC/W O O O O A B C D E F G H I J K L M N
