VHB10-12S - NPN SILICON RF POWER TRANSISTOR
VHB10-12S Features
* Omnigold™ Metalization System B ØC MAXIMUM RATINGS IC VCBO VCEO VCES VEBO PDISS TJ TSTG θ JC 2.0 A 36 V 18 V 36 V 4.0 V 20 W @ TC = 25 C -65 OC to +200 OC -65 OC to +150 OC 8.8 OC/W O DIM A B C D E F G H I J D H I J #8-32 UNC-2A F E G MINIMUM inches / mm MAXI
