Datasheet Details
- Part number
- AP83T03GJB
- Manufacturer
- Advanced Power Electronics
- File Size
- 59.70 KB
- Datasheet
- AP83T03GJB-AdvancedPowerElectronics.pdf
- Description
- N-CHANNEL INSULATED GATE BIPOLAR TRANSISTOR
AP83T03GJB Description
Advanced Power Electronics Corp.AP83T03GJB Halogen-Free Product N-CHANNEL ENHANCEMENT MODE POWER MOSFET ▼ Low On-resistance D ▼ Simple Drive Requ.AP83T03GJB Applications
* The TO-251S short lead package is preferred for all commercial-industrial through-hole applications without leadcutted. BVDSS RDS(ON) ID 30V 6mΩ 75A GD S TO-251S(JB) Absolute Maximum Ratings@Tj=25oC(unless otherwise specified) Symbol . Parameter Rating Units VDS VGS ID@TC=25℃ ID@TC=100℃ IDM📁 Related Datasheet
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