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AP86T02GJB N-CHANNEL ENHANCEMENT MODE POWER MOSFET

AP86T02GJB Description

Advanced Power Electronics Corp.▼ Simple Drive Requirement ▼ Low On-resistance ▼ Fast Switching Characteristic ▼ RoHS Compliant & Halogen-Free AP86T.
AP86T02 series are from Advanced Power innovated design and silicon process technology to achieve the lowest possible onresistance and fast switching.

AP86T02GJB Applications

* The TO-251S short lead package is preferred for all commercialindustrial through-hole applications without lead-cutted. GD S TO-251S(JB) Absolute Maximum Ratings@Tj=25oC(unless otherwise specified) Symbol . Parameter Rating Units VDS VGS ID@TC=25℃ ID@TC=100℃ IDM Drain-Source Voltage Gate-Sou

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Datasheet Details

Part number
AP86T02GJB
Manufacturer
Advanced Power Electronics
File Size
98.25 KB
Datasheet
AP86T02GJB-AdvancedPowerElectronics.pdf
Description
N-CHANNEL ENHANCEMENT MODE POWER MOSFET

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N-CHANNEL ENHANCEMENT MODE POWER MOSFET Advanced Power Electronics
Advanced Power Electronics AP86T02GJB-like datasheet