VLB10-12F NPN SILICON RF POWER TRANSISTOR

Advanced Semiconductor

VLB10-12F Description

VLB10-12F NPN SILICON RF POWER TRANSISTOR .
The ASI VLB10-12F is Designed for 12. Common Emitter. PG =.

VLB10-12F Features

* Common Emitter
* PG = 16 dB at 10 W/50 MHz
* Omnigold™ Metalization System MAXIMUM RATINGS IC 2.0 A VCBO 36 V VCES 36 V VEBO 4.0 V PDISS 35 W @ TC = 25 °C TJ -65 °C to +200 °C TSTG -65 °C to +150 °C θJC 5.0 °C/W PACKAGE STYLE .380 4L FLG .112 x 45° B A

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Datasheet Details

Part number: VLB10-12F
Manufacturer: Advanced Semiconductor
File Size: 14.22 KB
Datasheet: VLB10-12F_AdvancedSemiconductor.pdf
Description: NPN SILICON RF POWER TRANSISTOR

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NPN SILICON POWER TRANSISTOR Advanced Semiconductor

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