K210
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Silicon zener diodes.
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K210 - LOW LEVEL ZENER DIODES VERY LOW VOLTAGE/ LOW LEAKAGE
(Knox Semiconductor)
LOW LEVEL ZENER DIODES VERY LOW VOLTAGE, LOW LEAKAGE K120 - K510
• Conserves battery life • Unique manufacturing process • Provides lowest reverse lea.
K210 - LOW LEVEL ZENER DIODES VERY LOW VOLTAGE/ LOW LEAKAGE
(Knox Inc)
LOW LEVEL ZENER DIODES VERY LOW VOLTAGE, LOW LEAKAGE K120 - K510
• Conserves battery life • Unique manufacturing process • Provides lowest reverse lea.
K210 - 2SK210
(Toshiba Semiconductor)
2SK210
TOSHIBA Field Effect Transistor Silicon N Channel Junction Type
2SK210
FM Tuner Applications VHF Band Amplifier Applications
• • • High power .
K2101 - 2SK2101
(Fuji Electric)
..
2SK2101-01MR
FAP-IIA Series
N-channel MOS-FET
800V
2,1Ω
6A
50W
> Features
High Speed Switching Low On-Resistance No Secondar.
K2111 - MOS Field Effect Transistor
(Kexin)
SMD Type
MOS Field Effect Transistor 2SK2111
MOSFICET
Features
Low on-resistance RDS(on)=0.6 MAX.@VGS=4.0V,ID=0.5A High switching speed
SOT-89
4.5.
K2111 - 2SK2111
(NEC)
DATA SHEET
MOS FIELD EFFECT TRANSISTOR
2SK2111
N-CHANNEL MOS FET FOR HIGH-SPEED SWITCHING
The 2SK2111 is a N-channel MOS FET of a vertical type and i.
K2114 - 2SK2114
(Hitachi Semiconductor)
2SK2114, 2SK2115
Silicon N-Channel MOS FET
Application
High speed power switching
Features
• Low on-resistance • High speed switching • Low drive curr.
K2115 - 2SK2115
(Hitachi Semiconductor)
2SK2114, 2SK2115
Silicon N-Channel MOS FET
Application
High speed power switching
Features
• Low on-resistance • High speed switching • Low drive curr.
K2128 - 2SK2128
(ETC)
.. Power F-MOS FETs
2SK2128
Silicon N-Channel Power F-MOS FET
s Features
q Avalanche energy capacity guaranteed: EAS > 15mJ q VGSS =.
K2129 - 2SK2129
(ETC)
Power F-MOS FETs
2SK2129
Silicon N-Channel Power F-MOS FET
s Features
q Avalanche energy capacity guaranteed: EAS > 20mJ q VGSS = ±30V guaranteed q H.
