K2114 - 2SK2114

Datasheet Summary

Features

Low on-resistance.
High speed switching.
Low drive current.
No secondary breakdown.
Suitable for Switching regulator Outline TO-220CFM D 12 3 1. Gate G 2. Drain 3. Source S 2SK2114, 2SK2115 Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage 2SK2114 2SK2115 Gate to source voltage Drain current Drain peak current Body to drain diode reverse drain current Channel dissipation Channel temperature Storage temperature Notes 1. P.

Hitachi Semiconductor

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Datasheet Details

Part number	K2114
Manufacturer	Hitachi Semiconductor
File Size	32.94 KB
Description	2SK2114
Datasheet	K2114 Datasheet
Additional preview pages of the K2114 datasheet.

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Other Datasheets by Hitachi Semiconductor

K2115 - 2SK2115

Full PDF Text Transcription

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2SK2114, 2SK2115 Silicon N-Channel MOS FET Application High speed power switching Features • Low on-resistance • High speed switching • Low drive current • No secondary breakdown • Suitable for Switching regulator Outline TO-220CFM D 12 3 1. Gate G 2. Drain 3. Source S 2SK2114, 2SK2115 Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage 2SK2114 2SK2115 Gate to source voltage Drain current Drain peak current Body to drain diode reverse drain current Channel dissipation Channel temperature Storage temperature Notes 1. PW ≤ 10 µs, duty cycle ≤ 1 % 2.

Published: Dec 15, 2015 |