Part number:
K2111
Manufacturer:
Kexin
File Size:
42.25 KB
Description:
Mos field effect transistor.
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---|---|---|---|---|---|---|---|---|
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On-Shore Technology Inc | OSTYK21112030 | CONN BARRIER STRIP 12CIRC 0.25" | DigiKey | 1340 | 1000 units |
$2.23
|
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K2111
Kexin
42.25 KB
Mos field effect transistor.
* Low on-resistance RDS(on)=0.6 MAX.@VGS=4.0V,ID=0.5A High switching speed SOT-89 4.50+0.1 -0.1 1.80+0.1 -0.1 12 3 0.48+0.1 -0.1 0.53+0.1 -0.1 +0.12.50 -0.1 +0.14.00 -0.1 Unit: mm 1.50+0.1 -0.1 0.44+0.1 -0.1 +0.10.80 -0.1 +0.12.60 -0.1 3.00+0.1 -0.1 Absolute Maximum Ratings Ta = 25 Parameter
📁 Related Datasheet
K2111 - 2SK2111
(NEC)
DATA SHEET
MOS FIELD EFFECT TRANSISTOR
2SK2111
N-CHANNEL MOS FET FOR HIGH-SPEED SWITCHING
The 2SK2111 is a N-channel MOS FET of a vertical type and i.
K2114 - 2SK2114
(Hitachi Semiconductor)
2SK2114, 2SK2115
Silicon N-Channel MOS FET
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Features
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K2115 - 2SK2115
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Model
K120 K150 K180 K210 K240 K270 K300 K330 K360 K390 K430 K470 .
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K210 - LOW LEVEL ZENER DIODES VERY LOW VOLTAGE/ LOW LEAKAGE
(Knox Inc)
LOW LEVEL ZENER DIODES VERY LOW VOLTAGE, LOW LEAKAGE K120 - K510
• Conserves battery life • Unique manufacturing process • Provides lowest reverse lea.
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