1N5819 Features
* Metal silicon junction, majority carrier conduction
* Low power loss, high efficiency
* Guard ring for overvoltage protection
* High current capability, low forward voltage drop
* High surge capability
* For use in low voltage, high frequency inverters, free wheeling, and p
Datasheet Details
1N5819, 1N5817
AiT Components
495.56 KB
Schottky diodes.
This datasheet PDF includes multiple part numbers: 1N5819, 1N5817.
Please refer to the document for exact specifications by model.
1N5819 Distributor
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