
Part number:
AM12NS10H
Manufacturer:
AiT Semiconductor
File Size:
1.34MB
Download:
Description:
Mosfet. FEATURES The AM12NS10H is available in a TO-220, TO-220F, TO-252, TO-251, SOP8, TO-263-2 and PDFN8(5x6) packages. Package TO-220
AM12NS10H
AiT Semiconductor
1.34MB
Mosfet. FEATURES The AM12NS10H is available in a TO-220, TO-220F, TO-252, TO-251, SOP8, TO-263-2 and PDFN8(5x6) packages. Package TO-220
📁 Related Datasheet
AM12N50P - N-Channel MOSFET
(Analog Power)
Analog Power
N-Channel 500-V (D-S) MOSFET
Key Features: • Low rDS(on) trench technology • Low thermal impedance • Fast switching speed
Typical Applica.
AM12N65B - N-Channel MOSFET
(Analog Power)
Analog Power
N-Channel 650-V (D-S) MOSFET
Key Features: • Low rDS(on) trench technology • Low thermal impedance • Fast switching speed
Typical Applica.
AM12N65P - N-Channel MOSFET
(Analog Power)
Analog Power
N-Channel 650-V (D-S) MOSFET
Key Features: • Low rDS(on) trench technology • Low thermal impedance • Fast switching speed
Typical Applica.
AM12N65PCFM - N-Channel MOSFET
(Analog Power)
Analog Power
N-Channel 650-V (D-S) MOSFET
Key Features: • Low rDS(on) trench technology • Low thermal impedance • Fast switching speed
Typical Applica.
AM12N70P - N-Channel MOSFET
(Analog Power)
Analog Power
N-Channel 700-V (D-S) MOSFET
Key Features: • Low rDS(on) trench technology • Low thermal impedance • Fast switching speed
Typical Applica.
AM1214-100 - L-BAND RADAR APPLICATIONS RF & MICROWAVE TRANSISTORS
(STMicroelectronics)
AM1214-100
RF & MICROWAVE TRANSISTORS L-BAND RADAR APPLICATIONS
. . . . . . .
PRELIMINARY DATA
REFRACTORY/GOLD METALLIZATION EMITTER SITE BALLASTED.
AM1214-175 - RF & MICROWAVE TRANSISTORS
(STMicroelectronics)
AM1214-175
RF & MICROWAVE TRANSISTORS
L-BAND RADAR APPLICATIONS
REFRACTORY/GOLD METALLIZATION EMITTER SITE BALLASTED 3:1 VSWR CAPABILITY L.
AM1214-200 - L-BAND RADAR APPLICATIONS RF & MICROWAVE TRANSISTORS
(STMicroelectronics)
AM1214-200
RF & MICROWAVE TRANSISTORS L-BAND RADAR APPLICATIONS
. . . . . . .
PRELIMINARY DATA
REFRACTORY/GOLD METALLIZATION EMITTER SITE BALLASTED.
AM1214-250 - RF POWER TRANSISTORS L-BAND RADAR APPLICATIONS
(ST Microelectronics)
..
AM1214-250
RF POWER TRANSISTORS L-BAND RADAR APPLICATIONS
TARGET DATA
• REFRACTORY /GOLD METALLIZATION • EMITTER SITE BALLASTING.
AM1214-300 - RF & MICROWAVE TRANSISTORS
(STMicroelectronics)
AM1214-300
RF & MICROWAVE TRANSISTORS
L-BAND RADAR APPLICATIONS
REFRACTORY/GOLD METALLIZATION EMITTER SITE BALLASTED 5:1 VSWR CAPABILITY L.