AM1214-200 Datasheet, Transistors, STMicroelectronics

PDF File Details

Part number:

AM1214-200

Manufacturer:

STMicroelectronics ↗

File Size:

57.53kb

Download:

📄 Datasheet

Description:

L-band radar applications rf & microwave transistors. The AM1214-200 device is a high power Class C transistor specifically designed for L-Band Radar pulsed output and driver applications

AM1214-200 Application

• Applications . . . . . . . PRELIMINARY DATA REFRACTORY/GOLD METALLIZATION EMITTER SITE BALLASTED LOW THERMAL RESISTANCE INPUT/OUTPUT MATCHING OVE

TAGS

AM1214-200

STMicroelectronics

📁 Related Datasheet

AM1214-250 - RF POWER TRANSISTORS L-BAND RADAR APPLICATIONS (ST Microelectronics)
.. AM1214-250 RF POWER TRANSISTORS L-BAND RADAR APPLICATIONS TARGET DATA • REFRACTORY /GOLD METALLIZATION • EMITTER SITE BALLASTING.

AM1214-100 - L-BAND RADAR APPLICATIONS RF & MICROWAVE TRANSISTORS (STMicroelectronics)
AM1214-100 RF & MICROWAVE TRANSISTORS L-BAND RADAR APPLICATIONS . . . . . . . PRELIMINARY DATA REFRACTORY/GOLD METALLIZATION EMITTER SITE BALLASTED.

AM1214-175 - RF & MICROWAVE TRANSISTORS (STMicroelectronics)
AM1214-175 RF & MICROWAVE TRANSISTORS L-BAND RADAR APPLICATIONS REFRACTORY/GOLD METALLIZATION EMITTER SITE BALLASTED 3:1 VSWR CAPABILITY L.

AM1214-300 - RF & MICROWAVE TRANSISTORS (STMicroelectronics)
AM1214-300 RF & MICROWAVE TRANSISTORS L-BAND RADAR APPLICATIONS REFRACTORY/GOLD METALLIZATION EMITTER SITE BALLASTED 5:1 VSWR CAPABILITY L.

AM1214-300 - NPN SILICON RF POWER TRANSISTOR (ASI)
AM1214-300 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI AM1214-300 is Designed for 1200 – 1400 MHz, L-Band Applications. .. .

AM1214-325 - L-BAND RADAR APPLICATIONS RF & MICROWAVE TRANSISTORS (STMicroelectronics)
AM1214-325 . . . . . . . . RF & MICROWAVE TRANSISTORS L-BAND RADAR APPLICATIONS REFRACTORY/GOLD METALLIZATION EMITTER SITE BALLASTED 5:1 VSWR CAPABI.

AM1280 - linear CCD sensor (OTO Photonics)
AM1280/AM2280 Datasheet AM1280/AM2280 Datasheet Description AM1280/AM2280 spectro-module is built in with the linear CCD type sensor and 8 pin externa.

AM12N50P - N-Channel MOSFET (Analog Power)
Analog Power N-Channel 500-V (D-S) MOSFET Key Features: • Low rDS(on) trench technology • Low thermal impedance • Fast switching speed Typical Applica.

AM12N65B - N-Channel MOSFET (Analog Power)
Analog Power N-Channel 650-V (D-S) MOSFET Key Features: • Low rDS(on) trench technology • Low thermal impedance • Fast switching speed Typical Applica.

AM12N65P - N-Channel MOSFET (Analog Power)
Analog Power N-Channel 650-V (D-S) MOSFET Key Features: • Low rDS(on) trench technology • Low thermal impedance • Fast switching speed Typical Applica.