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AM1214-200 - L-BAND RADAR APPLICATIONS RF & MICROWAVE TRANSISTORS

AM1214-200 Description

AM1214-200 RF & MICROWAVE TRANSISTORS L-BAND RADAR APPLICATIONS *..PRELIMINARY DATA REFRACTORY/GOLD METALLIZATION EMITTER SITE BALLASTED .
The AM1214-200 device is a high power Class C transistor specifically designed for L-Band Radar pulsed output and driver applications.

AM1214-200 Applications

* . . PRELIMINARY DATA REFRACTORY/GOLD METALLIZATION EMITTER SITE BALLASTED LOW THERMAL RESISTANCE INPUT/OUTPUT MATCHING OVERLAY GEOMETRY METAL/CERAMIC HERMETIC PACKAGE P OUT = 200 W MIN. WITH 7.0 dB GAIN .400 x .500 2LFL (M205) hermetically sealed ORDER CODE BRANDING 1214-200 AM1214-200

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