AM1214-325 L-BAND RADAR APPLICATIONS RF & MICROWAVE TRANSISTORS

STMicroelectronics

Description

AM1214-325 *...RF & MICROWAVE TRANSISTORS L-BAND RADAR APPLICATIONS REFRACTORY/GOLD METALLIZATION EMITTER SITE BALLASTED 5:1 VSWR CAPABIL.
The AM1214-325 device is a high power transistor specifically designed for L-Band radar pulsed output and driver applications.

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Datasheet Specifications

Part number: AM1214-325
Manufacturer: STMicroelectronics ↗
File Size: 64.97 KB
Datasheet: AM1214-325_STMicroelectronics.pdf
Description: L-BAND RADAR APPLICATIONS RF & MICROWAVE TRANSISTORS

Applications

* REFRACTORY/GOLD METALLIZATION EMITTER SITE BALLASTED 5:1 VSWR CAPABILITY LOW THERMAL RESISTANCE INPUT/OUTPUT MATCHING OVERLAY GEOMETRY METAL/CERAMIC HERMETIC PACKAGE POUT = 325 W MIN. WITH 6.4 dB GAIN .400 x .500 2LFL (S038) hermetically sealed ORDER CODE AM1214-325 BRANDING 1214-325 PIN CONNECTIO

AM1214-325 Distributors

📁 Related Datasheet

AM1214-250 AM1280 AM12N50P AM12N65B AM12N65P AM12N65PCFM

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AM1214-325 L-BAND RADAR APPLICATIONS MICROWAVE TRANSISTORS STMicroelectronics

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