Datasheet Details
- Part number
- AM1214-175
- Manufacturer
- STMicroelectronics ↗
- File Size
- 93.23 KB
- Datasheet
- AM1214-175_STMicroelectronics.pdf
- Description
- RF & MICROWAVE TRANSISTORS
AM1214-175 Description
AM1214-175 RF & MICROWAVE TRANSISTORS L-BAND RADAR APPLICATIONS REFRACTORY/GOLD METALLIZATION EMITTER SITE BALLASTED 3:1 VSWR CAPABILITY LOW THERM.
The AM1214-175 device is a high power Class C transistor specifically designed for L-Band radar pulsed output and driver applications.
AM1214-175 Applications
* REFRACTORY/GOLD METALLIZATION EMITTER SITE BALLASTED 3:1 VSWR CAPABILITY LOW THERMAL RESISTANCE INPUT/OUTPUT MATCHING OVERLAY GEOMETRY METAL/CERAMIC HERMETIC PACKAGE POUT = 160 W MIN. WITH 7.3 dB GAIN
.400 x .500 2LFL (S038) hermetically sealed
ORDER CODE AM1214-175
B RA ND IN G 1214-175
DESCR
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