AM1214-175 Datasheet (93.23 KB)
AM1214-175
93.23 KB
Rf & microwave transistors.
AM1214-175
RF & MICROWAVE TRANSISTORS
L-BAND RADAR APPLICATIONS
REFRACTORY/GOLD METALLIZATION EMITTER SITE BALLASTED 3:1 VSWR CAPABILITY LOW THERM.
📁 Related Datasheet
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AM1214-100
RF & MICROWAVE TRANSISTORS L-BAND RADAR APPLICATIONS
. . . . . . .
PRELIMINARY DATA
REFRACTORY/GOLD METALLIZATION EMITTER SITE BALLASTED.
AM1214-200 - L-BAND RADAR APPLICATIONS RF & MICROWAVE TRANSISTORS
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PRELIMINARY DATA
REFRACTORY/GOLD METALLIZATION EMITTER SITE BALLASTED.
AM1214-250 - RF POWER TRANSISTORS L-BAND RADAR APPLICATIONS
(ST Microelectronics)
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TARGET DATA
• REFRACTORY /GOLD METALLIZATION • EMITTER SITE BALLASTING.
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L-BAND RADAR APPLICATIONS
REFRACTORY/GOLD METALLIZATION EMITTER SITE BALLASTED 5:1 VSWR CAPABILITY L.
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NPN SILICON RF POWER TRANSISTOR
DESCRIPTION:
The ASI AM1214-300 is Designed for 1200 – 1400 MHz, L-Band Applications.
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AM1214-325 - L-BAND RADAR APPLICATIONS RF & MICROWAVE TRANSISTORS
(STMicroelectronics)
AM1214-325
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REFRACTORY/GOLD METALLIZATION EMITTER SITE BALLASTED 5:1 VSWR CAPABI.
AM1280 - linear CCD sensor
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AM1280/AM2280 Datasheet
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Description
AM1280/AM2280 spectro-module is built in with the linear CCD type sensor and 8 pin externa.
AM12N50P - N-Channel MOSFET
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N-Channel 500-V (D-S) MOSFET
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Typical Applica.
