AM1214-175 RF & MICROWAVE TRANSISTORS

STMicroelectronics

Description

AM1214-175 RF & MICROWAVE TRANSISTORS L-BAND RADAR APPLICATIONS REFRACTORY/GOLD METALLIZATION EMITTER SITE BALLASTED 3:1 VSWR CAPABILITY LOW THERM.
The AM1214-175 device is a high power Class C transistor specifically designed for L-Band radar pulsed output and driver applications.

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Datasheet Specifications

Part number: AM1214-175
Manufacturer: STMicroelectronics ↗
File Size: 93.23 KB
Datasheet: AM1214-175_STMicroelectronics.pdf
Description: RF & MICROWAVE TRANSISTORS

Applications

* REFRACTORY/GOLD METALLIZATION EMITTER SITE BALLASTED 3:1 VSWR CAPABILITY LOW THERMAL RESISTANCE INPUT/OUTPUT MATCHING OVERLAY GEOMETRY METAL/CERAMIC HERMETIC PACKAGE POUT = 160 W MIN. WITH 7.3 dB GAIN .400 x .500 2LFL (S038) hermetically sealed ORDER CODE AM1214-175 B RA ND IN G 1214-175 DESCR

AM1214-175 Distributors

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AM1214-175 MICROWAVE TRANSISTORS STMicroelectronics

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