AM1214-300 RF & MICROWAVE TRANSISTORS

STMicroelectronics

Description

AM1214-300 RF & MICROWAVE TRANSISTORS L-BAND RADAR APPLICATIONS REFRACTORY/GOLD METALLIZATION EMITTER SITE BALLASTED 5:1 VSWR CAPABILITY LOW THERM.
The AM1214-300 device is a high power transistor specifically designed for L-Band radar pulsed output and driver applications.

📥 Download Datasheet

AM1214-300 Datasheet Preview — Preview of AM1214-300 PDF

Datasheet Specifications

Part number: AM1214-300
Manufacturer: STMicroelectronics ↗
File Size: 90.35 KB
Datasheet: AM1214-300_STMicroelectronics.pdf
Description: RF & MICROWAVE TRANSISTORS

Applications

* REFRACTORY/GOLD METALLIZATION EMITTER SITE BALLASTED 5:1 VSWR CAPABILITY LOW THERMAL RESISTANCE INPUT/OUTPUT MATCHING OVERLAY GEOMETRY METAL/CERAMIC HERMETIC PACKAGE POUT = 270 W MIN. WITH 6.3 dB GAIN .400 x .500 2LFL (S038) hermetically sealed ORDER CODE AM1214-300 BRANDING 1214-300 DESCRIPTI

AM1214-300 Distributors

📁 Related Datasheet

AM1214-250 - RF POWER TRANSISTORS L-BAND RADAR APPLICATIONS (ST Microelectronics)
AM1280 - linear CCD sensor (OTO Photonics)
AM12N50P - N-Channel MOSFET (Analog Power)
AM12N65B - N-Channel MOSFET (Analog Power)
AM12N65P - N-Channel MOSFET (Analog Power)
AM12N65PCFM - N-Channel MOSFET (Analog Power)

📌 All Tags

MICROWAVE TRANSISTORS STMicroelectronics

STMicroelectronics AM1214-300-like datasheet

AM1214-325 - L-BAND RADAR APPLICATIONS RF & MICROWAVE TRANSISTORS
AM1214-100 - L-BAND RADAR APPLICATIONS RF & MICROWAVE TRANSISTORS
AM1214-175 - RF & MICROWAVE TRANSISTORS
AM1214-200 - L-BAND RADAR APPLICATIONS RF & MICROWAVE TRANSISTORS
AM1011-070 - RF & MICROWAVE TRANSISTORS L-BAND AVIONICS APPLICATIONS