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AM1214-300 RF & MICROWAVE TRANSISTORS

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Description

AM1214-300 RF & MICROWAVE TRANSISTORS L-BAND RADAR APPLICATIONS REFRACTORY/GOLD METALLIZATION EMITTER SITE BALLASTED 5:1 VSWR CAPABILITY LOW THERM.
The AM1214-300 device is a high power transistor specifically designed for L-Band radar pulsed output and driver applications.

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Applications

* REFRACTORY/GOLD METALLIZATION EMITTER SITE BALLASTED 5:1 VSWR CAPABILITY LOW THERMAL RESISTANCE INPUT/OUTPUT MATCHING OVERLAY GEOMETRY METAL/CERAMIC HERMETIC PACKAGE POUT = 270 W MIN. WITH 6.3 dB GAIN .400 x .500 2LFL (S038) hermetically sealed ORDER CODE AM1214-300 BRANDING 1214-300 DESCRIPTI

AM1214-300 Distributors

📁 Related Datasheet

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📌 All Tags

AM1214-300 MICROWAVE TRANSISTORS STMicroelectronics
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