AM1214-300 Datasheet (90.35 KB)
AM1214-300
90.35 KB
Rf & microwave transistors.
AM1214-300
RF & MICROWAVE TRANSISTORS
L-BAND RADAR APPLICATIONS
REFRACTORY/GOLD METALLIZATION EMITTER SITE BALLASTED 5:1 VSWR CAPABILITY LOW THERM.
📁 Related Datasheet
AM1214-300 - NPN SILICON RF POWER TRANSISTOR
(ASI)
AM1214-300
NPN SILICON RF POWER TRANSISTOR
DESCRIPTION:
The ASI AM1214-300 is Designed for 1200 – 1400 MHz, L-Band Applications.
..
.
AM1214-325 - L-BAND RADAR APPLICATIONS RF & MICROWAVE TRANSISTORS
(STMicroelectronics)
AM1214-325
. . . . . . . .
RF & MICROWAVE TRANSISTORS L-BAND RADAR APPLICATIONS
REFRACTORY/GOLD METALLIZATION EMITTER SITE BALLASTED 5:1 VSWR CAPABI.
AM1214-100 - L-BAND RADAR APPLICATIONS RF & MICROWAVE TRANSISTORS
(STMicroelectronics)
AM1214-100
RF & MICROWAVE TRANSISTORS L-BAND RADAR APPLICATIONS
. . . . . . .
PRELIMINARY DATA
REFRACTORY/GOLD METALLIZATION EMITTER SITE BALLASTED.
AM1214-175 - RF & MICROWAVE TRANSISTORS
(STMicroelectronics)
AM1214-175
RF & MICROWAVE TRANSISTORS
L-BAND RADAR APPLICATIONS
REFRACTORY/GOLD METALLIZATION EMITTER SITE BALLASTED 3:1 VSWR CAPABILITY L.
AM1214-200 - L-BAND RADAR APPLICATIONS RF & MICROWAVE TRANSISTORS
(STMicroelectronics)
AM1214-200
RF & MICROWAVE TRANSISTORS L-BAND RADAR APPLICATIONS
. . . . . . .
PRELIMINARY DATA
REFRACTORY/GOLD METALLIZATION EMITTER SITE BALLASTED.
AM1214-250 - RF POWER TRANSISTORS L-BAND RADAR APPLICATIONS
(ST Microelectronics)
..
AM1214-250
RF POWER TRANSISTORS L-BAND RADAR APPLICATIONS
TARGET DATA
• REFRACTORY /GOLD METALLIZATION • EMITTER SITE BALLASTING.
AM1280 - linear CCD sensor
(OTO Photonics)
AM1280/AM2280 Datasheet
AM1280/AM2280 Datasheet
Description
AM1280/AM2280 spectro-module is built in with the linear CCD type sensor and 8 pin externa.
AM12N50P - N-Channel MOSFET
(Analog Power)
Analog Power
N-Channel 500-V (D-S) MOSFET
Key Features: • Low rDS(on) trench technology • Low thermal impedance • Fast switching speed
Typical Applica.
