Part number:
AM4435
Manufacturer:
AiT Semiconductor
File Size:
326.85 KB
Description:
-30v p-channel enhancement mode mosfet.
* The AM4435 is the P-Channel logic enhancement mode power field effect transistor is produced using high cell density. Advanced trench
* -30V/-8.0A, RDS(ON)=16mΩ(typ)@VGS =-10V -30V/-5.0A, RDS(ON)=26mΩ(typ)@VGS =-4.5V Super high density cell design for extremely low technology to
AM4435
AiT Semiconductor
326.85 KB
-30v p-channel enhancement mode mosfet.
📁 Related Datasheet
AM4430N - N-Channel MOSFET
(Analog Power)
Analog Power
N-Channel 30-V (D-S) MOSFET
These miniature surface mount MOSFETs utilize a high cell density trench process to provide low rDS(on) and t.
AM4431P - P-Channel MOSFET
(Analog Power)
Analog Power
P-Channel 30-V (D-S) MOSFET
Key Features: • Low rDS(on) trench technology • Low thermal impedance • Fast switching speed
Typical Applicat.
AM4432N - N-Channel MOSFET
(Analog Power)
Analog Power
N-Channel 30-V (D-S) MOSFET
Key Features: • Low rDS(on) trench technology • Low thermal impedance • Fast switching speed
Typical Applicat.
AM4434N - N-Channel MOSFET
(Analog Power)
Analog Power
N-Channel 30-V (D-S) MOSFET
These miniature surface mount MOSFETs utilize a high cell density trench process to provide low rDS(on) and t.
AM4436N - MOSFET
(Analog Power)
Analog Power N-Channel 30-V (D-S) MOSFET
These miniature surface mount MOSFETs utilize a high cell density trench process to provide low rDS(on) and t.
AM4437P - P-Channel MOSFET
(Analog Power)
Analog Power
P-Channel 30-V (D-S) MOSFET
Key Features: • Low rDS(on) trench technology • Low thermal impedance • Fast switching speed
Typical Applicat.
AM4438N - MOSFET
(Analog Power)
Analog Power N-Channel 30-V (D-S) MOSFET
These miniature surface mount MOSFETs utilize a high cell density trench process to provide low rDS(on) and t.
AM4400N - N-Channel MOSFET
(Analog Power)
Analog Power
N-Channel 60-V (D-S) MOSFET
Key Features: • Low rDS(on) trench technology • Low thermal impedance • Fast switching speed
Typical Applicat.
