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AFP6801, AFP6801-Alfa Datasheet - Alfa-MOS

AFP6801 P-Channel MOSFET

AFP6801, P-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge. These devices are particularly suited for low voltage power management, such as smart phone and notebook computer and other battery powered circuits, and low in-line power loss .

AFP6801 Features

* -30V/-3.8A,RDS(ON)=135mΩ@VGS=-10.0V -30V/-2.8A,RDS(ON)=175mΩ@VGS=-4.5V -30V/-1.8A,RDS(ON)=245mΩ@VGS=-2.5V Super high density cell design for extremely low RDS (ON) Exceptional on-resistance and maximum DC current capability TSOP-6 package design Application Power Management in Note book Portable Eq

AFP6801-Alfa-MOS.pdf

This datasheet PDF includes multiple part numbers: AFP6801, AFP6801-Alfa. Please refer to the document for exact specifications by model.
AFP6801 Datasheet Preview Page 2 AFP6801 Datasheet Preview Page 3

Datasheet Details

Part number:

AFP6801, AFP6801-Alfa

Manufacturer:

Alfa-MOS

File Size:

581.16 KB

Description:

P-channel mosfet.

Note:

This datasheet PDF includes multiple part numbers: AFP6801, AFP6801-Alfa.
Please refer to the document for exact specifications by model.

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TAGS

AFP6801 AFP6801-Alfa P-Channel MOSFET Alfa-MOS

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