AFP6405WS, P-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge.
These devices are particularly suited for low voltage power management, and low in-line power loss are needed in commercial industrial surface mount applications.
Pin Descript
AFP6405WS Features
* -30V/-5.0A,RDS(ON)=54mΩ@VGS=-10.0V -30V/-4.0A,RDS(ON)=75mΩ@VGS=-4.5V Super high density cell design for extremely low RDS (ON) Exceptional on-resistance and maximum DC current capability TSOP-6 package design Application Power Management in Note book LED Display DC-DC System LCD Panel Pin Define
Datasheet Details
AFP6405WS, AFP6405WS-Alfa
Alfa-MOS
541.33 KB
P-channel mosfet.
This datasheet PDF includes multiple part numbers: AFP6405WS, AFP6405WS-Alfa.
Please refer to the document for exact specifications by model.
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