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AFP9560S

P-Channel Enhancement Mode MOSFET

AFP9560S Features

* -40V/ -14A,RDS(ON)= 13mΩ@VGS= -10V -40V/ -12A,RDS(ON)= 18mΩ@VGS= -4.5V Super high density cell design for extremely low RDS (ON) TO-252-2L package design Application Power Switch Load Switch in High Current Applications DC/DC Converters Pin Define Pin 1 2 3 Symbol G S D Description Gate Source

AFP9560S General Description

AFP9560S, P-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge. These devices are particularly suited for low voltage power management, and low in-line power loss are needed in commercial industrial surface mount applications. Pin Descripti.

AFP9560S Datasheet (799.51 KB)

Preview of AFP9560S PDF

Datasheet Details

Part number:

AFP9560S

Manufacturer:

Alfa-MOS

File Size:

799.51 KB

Description:

P-channel enhancement mode mosfet.

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TAGS

AFP9560S P-Channel Enhancement Mode MOSFET Alfa-MOS

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