AFP9569 - P-Channel Enhancement Mode MOSFET
AFP9569, P-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge.
These devices are particularly suited for low voltage power management, and low in-line power loss are needed in commercial industrial surface mount applications.
Pin Descriptio
AFP9569 Features
* -40V/ -10A,RDS(ON)=100mΩ@VGS= -10V
* -40V/ -6A,RDS(ON)= 110mΩ@VGS= -4.5V
* Super high density cell design for extremely low RDS (ON)
* TO-252-2L package design Application
* Backlight Inverter for LCD Display
* Full Bridge DC/DC Converter
* LED Display
* Load Switc
