AFP9569, AFP9569-Alfa Datasheet - Alfa-MOS

AFP9569 P-Channel Enhancement Mode MOSFET

AFP9569, P-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge. These devices are particularly suited for low voltage power management, and low in-line power loss are needed in commercial industrial surface mount applications. Pin Descriptio.

AFP9569 Features

* -40V/ -10A,RDS(ON)=100mΩ@VGS= -10V

* -40V/ -6A,RDS(ON)= 110mΩ@VGS= -4.5V

* Super high density cell design for extremely low RDS (ON)

* TO-252-2L package design Application

* Backlight Inverter for LCD Display

* Full Bridge DC/DC Converter

* LED Display

* Load Switc

AFP9569-Alfa-MOS.pdf

AFP9569 Datasheet Preview — This datasheet PDF includes multiple part numbers: AFP9569, AFP9569-Alfa. Please refer to the document for exact specifications by model.

Datasheet Details

Part number:

AFP9569, AFP9569-Alfa

Manufacturer:

Alfa-MOS

File Size:

568.82 KB

Description:

P-channel enhancement mode mosfet.

Note:

This datasheet PDF includes multiple part numbers: AFP9569, AFP9569-Alfa.
Please refer to the document for exact specifications by model.

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TAGS

AFP9569 AFP9569-Alfa P-Channel Enhancement Mode MOSFET Alfa-MOS

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