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AFP9565S

P-Channel Enhancement Mode MOSFET

AFP9565S Features

* -40V/ -8.6A,RDS(ON)= 58mΩ@VGS= -10V -40V/ -6.2A,RDS(ON)= 86mΩ@VGS= -4.5V Super high density cell design for extremely low RDS (ON) TO-252-2L package design Application Backlight Inverter for LCD Display Full Bridge DC/DC Converter LED Display Load Switch CCFL Inverter Pin Define Pin 1 2 3 Symbol

AFP9565S General Description

AFP9565S, P-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge. These devices are particularly suited for low voltage power management, and low in-line power loss are needed in commercial industrial surface mount applications. Pin Descripti.

AFP9565S Datasheet (821.34 KB)

Preview of AFP9565S PDF

Datasheet Details

Part number:

AFP9565S

Manufacturer:

Alfa-MOS

File Size:

821.34 KB

Description:

P-channel enhancement mode mosfet.

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TAGS

AFP9565S P-Channel Enhancement Mode MOSFET Alfa-MOS

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