Description
The AS7C33256FT18B is a high-performance CMOS 4-Mbit synchronous Static Random Access Memory (SRAM) device organized as 262,144 words × 18 bits.
Features
- Organization: 262,144 words × 18 bits Fast clock to data access: 6.5/7.5/8.0/10.0 ns Fast OE access time: 3.5/4.0 ns Fully synchronous flow through operation Asynchronous output enable control Availalbe in 100-pin TQFP package Individual byte write and Global write.
- Multiple chip enables for easy expansion 3.3V core power supply 2.5V or 3.3V I/O operation with separate.
AS7C33256FT18B_AllianceSemiconductorCorporation.pdf