AS29F010 Datasheet - Alliance Semiconductor

AS29F010 5V 128K x 8 CMOS FLASH EEPROM

# ® $65<)343 89#45;.ð;#&026#)ODVK#((3520 )HDWXUHV Organization: 128K × 8 bits Sector Erase architecture - Four 32K × 8 sectors Single 5.0±0.5V power supply for read/write operations High speed 120/150 ns address access time Low power consumption: - 30 mA maximum read current - 50 mA maximum program current - 1.5 mA maximum standby current - 1 mA maximum standby current (low power) 10,000 write/erase cycle endurance JEDEC sta.

AS29F010 Features

* for in-system programmability are provided. The AS29F010 provides high performance with a maximum access time of 120, or 150 ns. Chip Enable ( CE), Output Enable (OE), and Write Enable (WE) pins allow easy interface with the system bus. Program, erase, and verify operations are controlled with an on

AS29F010_AllianceSemiconductor.pdf