AS29LV160 Datasheet (Alliance Semiconductor) - 3V 2M x 8 / 1M x 16 CMOS Flash EEPROM

AS29LV160, 3V 2M x 8 / 1M x 16 CMOS Flash EEPROM

Selected by A9 = VID(9.5V *10.5V), CE = OE = A1 = A6 = L, enabling outputs.

When A0 is low (VIL) the output data = 52h, a unique Mfr.

code for Alliance Semiconductor Flash products.

When A0 is high (VIH), DOUT represents the device code for the AS29LV160.

Selected with CE = OE = L, WE = H.

$XJXVW $GYDQFHG ,QIRUPDWLRQ $6/9 9 0 î 0 î &026 )ODVK ((3520 )HDWXUHV Organization: 2M×8 / 1M×16 Sector architecture - One 16K; two 8K; one 32K; and thirty-one 64K byte sectors - One 8K; two 4K; one 16K; and thirty-one 32K word sectors - Boot code sector architecture T (top) or B (bottom) - Erase any combination of sectors or full chip Single 2.7-3.6V power supply for read/write operations Sector protection H

AS29LV160 Features

* single 3.0V power supply operation for Read, Write, and Erase functions. Internally generated and regulated voltages are provided for the Program and Erase operations. A low VCC detector automatically inhibits write operations during power transtitions. The RY/BY pin, DATA polling of DQ7, or toggle