AS29F040 Datasheet (Alliance Semiconductor) - 5V 512K x 8 CMOS FLASH EEPROM

AS29F040, 5V 512K x 8 CMOS FLASH EEPROM

Selected by A9 = VID(11.5 *12.5V), CE = OE = A1 = A6 = L, enabling outputs.

When A0 is low (VIL) the output data = 52h, a unique Mfr.

code for Alliance Semiconductor Flash products.

When A0 is high (VIH), DOUT represents the device code for the AS29F040.

Selected with CE = OE = L, WE = H.

Dat

3UHOLPLQDU#LQIRUPDWLRQ ® $65<)373 89#845.ð;#&026#)ODVK#((3520 )HDWXUHV Organization:512K words × 8 bits Industrial and commercial temperature Sector architecture - Eight 64K byte sectors - Erase any combination of sectors or full chip Single 5.0±0.5V power supply for read/write operations Sector protection High speed 55/70/90/120/150 ns address access time Automated on-chip programming algorithm - Automatically programs/veri

AS29F040 Features

* single 5.0V power supply operation for read, write, and erase functions. Internally generated and regulate voltages are provided for the program and erase operations. A low VCC detector automatically inhibits write operations during power transtitions. DATA polling of DQ7 or toggle bit (DQ6) may be