• Part: AS4C256M16D3LB-12BAN
  • Description: 4Gb DRAM
  • Manufacturer: Alliance Semiconductor
  • Size: 1.88 MB
Download AS4C256M16D3LB-12BAN Datasheet PDF
Alliance Semiconductor
AS4C256M16D3LB-12BAN
Features - Double-data-rate architecture; two data transfers per clock cycle - The high-speed data transfer is realized by the 8 bits prefetch pipelined architecture - Bi-directional differential data strobe (DQS and DQS) is transmitted/received with data for capturing data at the receiver - DQS is edge-aligned with data for READs; center-aligned with data for WRITEs - Differential clock inputs (CK and CK) - DLL aligns DQ and DQS transitions with CK transitions - mands entered on each positive CK edge; data and data mask referenced to both edges of DQS - Data mask (DM) for write data - Posted CAS by programmable additive latency for better mand and data bus efficiency - On-Die Termination (ODT) for better signal quality - Synchronous ODT - Dynamic ODT - Asynchronous ODT - Multi Purpose Register (MPR) for pre-defined pattern read out - ZQ calibration for DQ drive and ODT - Programmable Partial Array Self-Refresh (PASR) - RESET pin for Power-up sequence and reset function - SRT range :...