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AS4C256M16D3LB-12BIN

Manufacturer: Alliance Semiconductor

AS4C256M16D3LB-12BIN datasheet by Alliance Semiconductor.

AS4C256M16D3LB-12BIN datasheet preview

AS4C256M16D3LB-12BIN Datasheet Details

Part number AS4C256M16D3LB-12BIN
Datasheet AS4C256M16D3LB-12BIN-AllianceSemiconductor.pdf
File Size 2.37 MB
Manufacturer Alliance Semiconductor
Description 4Gb DRAM
AS4C256M16D3LB-12BIN page 2 AS4C256M16D3LB-12BIN page 3

AS4C256M16D3LB-12BIN Overview

2017 Alliance Memory Inc. 511 Taylor Way, San Carlos, CA 94070 TEL: (650) 620-9211 Alliance Memory Inc.

AS4C256M16D3LB-12BIN Key Features

  • Double-data-rate architecture; two data transfers per clock cycle
  • The high-speed data transfer is realized by the 8 bits prefetch pipelined architecture
  • Bi-directional differential data strobe (DQS and DQS) is transmitted/received with data for capturing data at the receiv
  • DQS is edge-aligned with data for READs; center-aligned with data for WRITEs
  • Differential clock inputs (CK and CK)
  • DLL aligns DQ and DQS transitions with CK transitions
  • mands entered on each positive CK edge; data and
  • Data mask (DM) for write data
  • Posted CAS by programmable additive latency for better
  • On-Die Termination (ODT) for better signal quality
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