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AS4C256M16D3LB-12BIN Datasheet 4gb Dram

Manufacturer: Alliance Semiconductor

Overview: AS4C256M16D3LB-12BIN AS4C256M16D3LB-12BCN Revision History 4Gb AS4C256M16D3LB - 12BIN/BCN 96 ball FBGA PACKAGE Revision Rev 1.0 Rev 1.1 Details Preliminary datasheet Add Industrial part datasheet Date Apr. 2016 Jan. 2017 Alliance Memory Inc. 511 Taylor Way, San Carlos, CA 94070 TEL: (650) 610-6800 FAX: (650) 620-9211 Alliance Memory Inc. reserves the right to change products or specification without notice Confidential - 1 of 46 - Rev.1.1 Jan. 2017 AS4C256M16D3LB-12BIN AS4C256M16D3LB-12BCN Specifications - Density : 4G bits - Organization : 32M words x 16 bits x 8 banks - Package : - 96-ball FBGA - Lead-free (RoHS pliant) and Halogen-free - Power supply : VDD, VDDQ = 1.35V (1.283V to 1.45V) - Backward patible to VDD, VDDQ = 1.5V ± 0.075V - Data rate : - 1600Mbps - 2KB page size - Row address: A0 to A14 - Column address: A0 to A9 - Eight internal banks for concurrent operation - Burst lengths (BL) : 8 and 4 with Burst Chop (BC) - Burst type (BT) : - Sequential (8, 4 with BC) - Interleave (8, 4 with BC) - CAS Latency (CL) : 5, 6, 7, 8, 9, 10, 11 - CAS Write Latency (CWL) : 5, 6, 7, 8 - Precharge : auto precharge option for each burst access - Driver strength : RZQ/7, RZQ/6 (RZQ = 240 Ω) - Refresh : auto-refresh, self-refresh - Refresh cycles : - Average refresh period 7.8 μs at -40°C ≤ Tc ≤ +85°C 3.

Key Features

  • - Double-data-rate architecture; two data transfers per clock cycle - The high-speed data transfer is realized by the 8 bits prefetch pipelined architecture - Bi-directional differential data strobe (DQS and DQS) is transmitted/received with data for capturing data at the receiver - DQS is edge-aligned with data for READs; center-aligned with data for WRITEs - Differential clock inputs (CK and CK) - DLL aligns DQ and DQS transitions with CK transitions - Commands entered on each positive CK edge.

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