AS4C32M16SC-7TIN, AS4C16M32SC-7TIN - 512M SDRAM

Alliance Semiconductor

Datasheet Details

Part number	AS4C32M16SC-7TIN, AS4C16M32SC-7TIN
Manufacturer	Alliance Semiconductor
File Size	1.43 MB
Description	512M SDRAM
Datasheet	AS4C16M32SC-7TIN-AllianceSemiconductor.pdf
Note	This datasheet PDF includes multiple part numbers: AS4C32M16SC-7TIN, AS4C16M32SC-7TIN. Please refer to the document for exact specifications by model.

Fully Synchronous to Positive Clock Edge.
Fast clock rate: 133 MHz.
Multiple Burst Read with Single Write Operation.
Four Banks controlled by BA0 & BA1.
Data Mask for Byte Control (x16,x32).
Programmable Mode registers - CAS Latency: 1 or 2 or 3 - Burst Length: 1, 2, 4, 8, or full page - Burst Type: Sequential or Interleaved.
Automatic and Controlled Precharge Command.
Auto.

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Published: Oct 25, 2018 |