AS4C64M16D1A-6TCN
Features
Overview
- Fast clock rate: 166MHz
- Differential Clock CK & CK
- Bi-directional DQS
- DLL enable/disable by EMRS
- Fully synchronous operation
- Internal pipeline architecture
- Four internal banks, 16M x 16-bit for each bank
- Programmable Mode and Extended Mode registers
- CAS Latency: 2, 2.5, 3
- Burst length: 2, 4, 8
- Burst Type: Sequential & Interleaved
- Individual byte write mask control
- DM Write Latency = 0
- Auto Refresh and Self Refresh
- 8192 refresh cycles / 64ms
- Precharge & active power down
- Power supplies: VDD & VDDQ = 2.5V ± 0.2V
- Industrial Operating Temperature: TA = -40~85°C
- Interface: SSTL_2 I/O Interface
- Package:
- 66 Pin TSOP II, 0.65mm pin pitch
- 60 Ball FBGA
- Pb and Halogen free
The 1Gb DDR SDRAM is a high-speed CMOS double data rate synchronous DRAM containing 1024 Mbits. It is internally configured as a quad 16M x 16 DRAM with a synchronous interface (all signals are registered on the positive edge of the clock signal, CK).
Data...
