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AS4C64M16D1A-6TIN - 1Gb SDRAM

General Description

Table 2.

Differential Clock: CK and CK are differential clock inputs.

All address and control input signals are sampled on the crossing of the positive edge of CK and negative edge of CK .

Key Features

  • Overview.
  • Fast clock rate: 166MHz.
  • Differential Clock CK & CK.
  • Bi-directional DQS.
  • DLL enable/disable by EMRS.
  • Fully synchronous operation.
  • Internal pipeline architecture.
  • Four internal banks, 16M x 16-bit for each bank.
  • Programmable Mode and Extended Mode registers - CAS Latency: 2, 2.5, 3 - Burst length: 2, 4, 8 - Burst Type: Sequential & Interleaved.
  • Individual byte write mask control.
  • DM Write Latency.

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Datasheet Details

Part number AS4C64M16D1A-6TIN
Manufacturer Alliance Semiconductor
File Size 1.48 MB
Description 1Gb SDRAM
Datasheet download datasheet AS4C64M16D1A-6TIN Datasheet

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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  AS4C64M16D1A   Revision History 1Gb SDRAM-AS4C64M16D1A - 66pin TSOP II / 60ball FBGA PACKAGE Revision Details Rev 1.0 Datasheet Rev 1.1 Add FBGA package - AS4C64M16D1A-BIN Date Oct 2015 Mar 2019 Alliance Memory Inc. 511 Taylor Way, San Carlos, CA 94070 TEL: (650) 610-6800 FAX: (650) 620-9211 Alliance Memory Inc. reserves the right to change products or specification without notice Confidential - 1 of 64 - Rev.1.1 Mar. 2019 AS4C64M16D1A Features Overview • Fast clock rate: 166MHz • Differential Clock CK & CK • Bi-directional DQS • DLL enable/disable by EMRS • Fully synchronous operation • Internal pipeline architecture • Four internal banks, 16M x 16-bit for each bank • Programmable Mode and Extended Mode registers - CAS Latency: 2, 2.