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AS4C64M16D1A-6TIN Datasheet 1gb Sdram

Manufacturer: Alliance Semiconductor

Overview:   AS4C64M16D1A   Revision History 1Gb SDRAM-AS4C64M16D1A - 66pin TSOP II / 60ball FBGA PACKAGE Revision Details Rev 1.0 Datasheet Rev 1.1 Add FBGA package - AS4C64M16D1A-BIN Date Oct 2015 Mar 2019 Alliance Memory Inc. 511 Taylor Way, San Carlos, CA 94070 TEL: (650) 610-6800 FAX: (650) 620-9211 Alliance Memory Inc. reserves the right to change products or specification without notice Confidential - 1 of 64 - Rev.1.1 Mar.

Key Features

  • Overview.
  • Fast clock rate: 166MHz.
  • Differential Clock CK & CK.
  • Bi-directional DQS.
  • DLL enable/disable by EMRS.
  • Fully synchronous operation.
  • Internal pipeline architecture.
  • Four internal banks, 16M x 16-bit for each bank.
  • Programmable Mode and Extended Mode registers - CAS Latency: 2, 2.5, 3 - Burst length: 2, 4, 8 - Burst Type: Sequential & Interleaved.
  • Individual byte write mask control.
  • DM Write Latency.

More Datasheets from Alliance Semiconductor

Part Number Description
AS4C64M16D1A-6TCN 1Gb SDRAM
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AS4C64M16D1 64M x 16 bit DDR1 Synchronous DRAM
AS4C64M16D2 1Gb (64M x 16 bit) DDRII Synchronous DRAM (SDRAM)
AS4C64M16D3 1Gb (64M x 16) bit DDR3 Synchronous DRAM
AS4C64M16MD1 1 Gb (64M x 16 bit) 1.8v High Performance Mobile DDR SDRAM
AS4C64M16MD2-25BCN SDRAM
AS4C64M16MD2A-25BIN 1G (64M x 16 and 32M x 32) Low Power DDR2 SDRAM
AS4C64M32MD4-062BAN 2Gb/4Gb/8Gb LPDDR4

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