AS4C64M16D1A-6BIN - 1Gb SDRAM

This page provides the datasheet information for the AS4C64M16D1A-6BIN, a member of the AS4C64M16D1A-6TIN 1Gb SDRAM family.

Product Overview

Alliance Semiconductor

Part number	AS4C64M16D1A-6BIN
Manufacturer	Alliance Semiconductor
File Size	1.48 MB
Description	1Gb SDRAM
Datasheet	AS4C64M16D1A-6BIN Datasheet
Additional preview pages of the AS4C64M16D1A-6BIN datasheet.

Table 2.

Differential Clock: CK and CK are differential clock inputs.

All address and control input signals are sampled on the crossing of the positive edge of CK and negative edge of CK .

Overview.
Fast clock rate: 166MHz.
Differential Clock CK & CK.
Bi-directional DQS.
DLL enable/disable by EMRS.
Fully synchronous operation.
Internal pipeline architecture.
Four internal banks, 16M x 16-bit for each bank.
Programmable Mode and Extended Mode registers - CAS Latency: 2, 2.5, 3 - Burst length: 2, 4, 8 - Burst Type: Sequential & Interleaved.
Individual byte write mask control.
DM Write Latency.

Other Datasheets by Alliance Semiconductor

Published: Aug 21, 2025 |