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AS4C64M16D1A-6BIN - 1Gb SDRAM

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Alliance Semiconductor

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AS4C64M16D1A-6BIN 1Gb SDRAM by Alliance Semiconductor - Datasheet Preview — Datasheet preview – AS4C64M16D1A-6BIN

Datasheet Details

Part number	AS4C64M16D1A-6BIN
Manufacturer	Alliance Semiconductor
File Size	1.48 MB
Description	1Gb SDRAM
Datasheet	AS4C64M16D1A-6BIN Datasheet
Note	This datasheet PDF includes multiple part numbers: AS4C64M16D1A-6BIN, AS4C64M16D1A-6TIN. Please refer to the document for exact specifications by model.
Additional preview pages of the AS4C64M16D1A-6BIN datasheet.

Product details

Description

Table 2.

Features

Overview.
Fast clock rate: 166MHz.
Differential Clock CK & CK.
Bi-directional DQS.
DLL enable/disable by EMRS.
Fully synchronous operation.
Internal pipeline architecture.
Four internal banks, 16M x 16-bit for each bank.
Programmable Mode and Extended Mode registers - CAS Latency: 2, 2.5, 3 - Burst length: 2, 4, 8 - Burst Type: Sequential & Interleaved.
Individual byte write mask control.
DM Write Latency.

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Published: Aug 21, 2025 |