AO4420L
Alpha & Omega Semiconductors
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N-channel fet. The AO4420 uses advanced trench technology to provide excellent R DS(ON), shoot-through immunity and www.DataSheet4U.com body diode c
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AO4420 - N-Channel MOSFET
(Freescale)
Freescale
N-Channel 30-V (D-S) MOSFET
Key Features: • Low rDS(on) trench technology • Low thermal impedance • Fast switching speed
Typical Application.
AO4420 - 30V N-Channel MOSFET
(Alpha & Omega Semiconductors)
AO4420
30V N-Channel MOSFET
General Description
The AO4420 uses advanced trench technology to provide excellent RDS(ON), shoot-through immunity and b.
AO4420 - N-Channel MOSFET
(VBsemi)
AO4420
AO4420 Datasheet
.VBsemi.
N-Channel 30-V (D-S) MOSFET
PRODUCT SUMMARY
VDS (V)
RDS(on) (Ω)
30
0.008 at VGS= 10 V
0.011 at VGS = 4.
AO4420A - 30V N-Channel MOSFET
(Alpha & Omega Semiconductors)
AO4420A
30V N-Channel MOSFET
General Description
The AO4420A uses advanced trench technology to provide excellent RDS(ON), shoot-through immunity and.
AO4421 - P-Channel FET
(Alpha & Omega Semiconductors)
AO4421
60V P-Channel MOSFET
General Description
Product Summary
The AO4421 bines advanced trench MOSFET technology with a low resistance package.
AO4421 - P-Channel MOSFET
(VBsemi)
AO4421
P-Channel 60 V (D-S) MOSFET
.VBsemi.
PRODUCT SUMMARY
VDS (V) RDS(on) (Ω) at VGS = -10 V RDS(on) (Ω) at VGS = -4.5 V ID (A) per leg
-6.
AO4422 - N-Channel MOSFET
(Alpha & Omega Semiconductors)
Jan 2003
AO4422 N-Channel Enhancement Mode Field Effect Transistor
General Description
The AO4422 uses advanced trench technology to provide excellen.
AO4422A - N-Channel FET
(Alpha & Omega Semiconductors)
AO4422A N-Channel Enhancement Mode Field Effect Transistor
General Description
The AO4422A uses advanced trench technology to provide excellent RDS(ON.
AO4423 - P-Channel MOSFET
(Freescale)
Freescale
P-Channel 30-V (D-S) MOSFET
These miniature surface mount MOSFETs utilize High Cell Density process. Low rDS(on) assures minimal power los.
AO4423 - 30V P-Channel MOSFET
(Alpha & Omega Semiconductors)
Rev 4: May 2005
AO4423 P-Channel Enhancement Mode Field Effect Transistor
General Description
.. provide
Features
VDS (V) = -30V ID.