AO4422A - N-Channel FET

Alpha & Omega Semiconductors

Datasheet Details

The AO4422A uses advanced trench technology to provide excellent RDS(ON) and low gate charge.

VDS (V) = 30V ID = 11A (V GS = 10V) RDS(ON) < 15mΩ (VGS = 10V) RDS(ON) < 24mΩ (VGS = 4.5V) D S S S G D D D D G S SOIC-8 Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol VDS Drain-Source Voltage VGS Gate-Source Voltage Continuous Drain Current A Pulsed Drain Current Power Dissipation B Maximum 30 ±20 11 9.3 50 3 2.1 -55 to 150 Units V V A TA=25°C TA=70°C TA=25°C TA=70°C ID IDM PD TJ, TSTG W °C Junction and Storage Temperature Range Thermal Characteristics Paramete.

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