AO4422A - N-Channel FET
The AO4422A uses advanced trench technology to provide excellent RDS(ON) and low gate charge.
This www.DataSheet4U.com device is suitable for use as a load switch or in PWM applications.
The source leads are separated to allow a Kelvin connection to the source, which may be used to bypass the source
AO4422A Features
* VDS (V) = 30V ID = 11A (V GS = 10V) RDS(ON) < 15mΩ (VGS = 10V) RDS(ON) < 24mΩ (VGS = 4.5V) D S S S G D D D D G S SOIC-8 Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol VDS Drain-Source Voltage VGS Gate-Source Voltage Continuous Drain Current A Pulsed Drain Current Power
