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AO4422A N-Channel FET

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Description

AO4422A N-Channel Enhancement Mode Field Effect Transistor General .
The AO4422A uses advanced trench technology to provide excellent RDS(ON) and low gate charge.

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Features

* VDS (V) = 30V ID = 11A (V GS = 10V) RDS(ON) < 15mΩ (VGS = 10V) RDS(ON) < 24mΩ (VGS = 4.5V) D S S S G D D D D G S SOIC-8 Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol VDS Drain-Source Voltage VGS Gate-Source Voltage Continuous Drain Current A Pulsed Drain Current Power

Applications

* The source leads are separated to allow a Kelvin connection to the source, which may be used to bypass the source inductance. Standard Product AO4422A is Pb-free (meets ROHS & Sony 259 specifications). AO4422AL is a Green Product ordering option. AO4422A and AO4422AL are electrically identical. Fe

AO4422A Distributors

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