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AO4600 MOSFET

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Description

AO4600 Complementary Enhancement Mode Field Effect Transistor General .
The AO4600 uses advanced trench technology to provide excellent R DS(ON) and low gate charge.

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Features

* n-channel p-channel -30V VDS (V) = 30V ID = 6.9A (VGS = 10V) -5A (VGS = -10V) RDS(ON) < 27mΩ < 49mΩ (VGS =- 10V) < 32mΩ < 64mΩ (VGS =- 4.5V) < 50mΩ < 120mΩ (VGS = -2.5V) D2 S2 G2 S1 G1 1 2 3 4 8 7 6 5 D2 D2 D1 D1 D1 www. DataSheet4U. com G2 S2 G1 S1 SOIC-8 n-channel p-channel Absolute Maximum

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