AO4812A - Dual N-Channel MOSFET

Alpha & Omega Semiconductors

Datasheet Details

Part number	AO4812A
Manufacturer	Alpha & Omega Semiconductors
File Size	135.09 KB
Description	Dual N-Channel MOSFET
Datasheet	AO4812A_AlphaOmegaSemiconductors.pdf

The AO4812A uses advanced trench technology to provide excellent RDS(ON) and low gate charge.

VDS (V) = 30V ID = 6.9A (VGS = 10V) RDS(ON) < 28m Ω (VGS = 10V) RDS(ON) < 42m Ω (VGS = 4.5V) D1 S2 G2 S1 G1 D2 D2 D1 D1 D2 www. DataSheet4U. com 1 2 3 4 8 7 6 5 G1 S1 G2 S2 SOIC-8 Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol VDS Drain-Source Voltage Gate-Source Voltage Continuous Drain Current A Pulsed Drain Current Power Dissipation B Maximum 30 ±20 6.9 5.8 30 2 1.44 -55 to 150 Units V V A VGS TA=25°C TA=70°C TA=25°C TA=70°C ID IDM PD TJ, TSTG W °C Juncti.

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Published: Jun 7, 2007 |