AO6800 - 30V Dual N-Channel MOSFET

Datasheet Summary

Description

The AO6800 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V.

This device is suitable for use as a load switch or in PWM applications.

Alpha & Omega Semiconductors

📥 Download Datasheet

Datasheet Details

Part number	AO6800
Manufacturer	Alpha & Omega Semiconductors
File Size	310.35 KB
Description	30V Dual N-Channel MOSFET
Datasheet	AO6800 Datasheet
Additional preview pages of the AO6800 datasheet.

📁 Similar Datasheet

AO6800 - Dual N-Channel MOSFET (VBsemi)
AO6800-HF - Dual N-Channel MOSFET (Kexin)
AO6801 - Dual P-Channel MOSFET (VBsemi)
AO6801A - Dual P-Channel MOSFET (Kexin)
AO6801A - Dual P-Channel 20V MOSFET (VBsemi)
AO6802 - N-Channel MOSFET (Freescale)
AO6804A - Dual N-Channel MOSFET (Kexin)
AO6403 - P-Channel MOSFET (VBsemi)
AO6409A - P-Channel MOSFET (VBsemi)
AO6601 - N- and P-Channel 20V MOSFET (VBsemi)

Other Datasheets by Alpha & Omega Semiconductors

AO6801 - Dual P-Channel MOSFET
AO6801A - 30V Dual P-Channel MOSFET
AO6802 - 30V Dual N-Channel MOSFET
AO6804 - Dual N-Channel MOSFET
AO6804A - 20V Dual N-Channel MOSFET
AO6808 - Dual N-Channel MOSFET
AO6810 - Dual N-Channel MOSFET
AO6400 - 30V N-Channel MOSFET

Full PDF Text Transcription

Click to expand full text

AO6800 30V Dual N-Channel MOSFET General Description Product Summary The AO6800 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a load switch or in PWM applications. VDS ID (at VGS=10V) RDS(ON) (at VGS= 10V) RDS(ON) (at VGS = 4.5V) RDS(ON) (at VGS = 2.5V) 30V 3.

Published: Nov 27, 2018 |